Electrical and Structural Analysis of <i>β</i>‐Ga₂O₃/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Wafer bonding of β-Ga2O3 and N-polar GaN single crystal substrates is demonstrated by adding ZnO as a “glue” interlayer. The wafers are fully bonded such that Newton rings not observed. Temperature-dependent current-voltage (I–V) measurements conducted on the as-bonded Ga2O3/ZnO/N-polar test structure after annealing at 600 °C 1100 °C. impact post-annealing temperature electrical structural characteristics samples investigated. A consistently ohmic-like characteristic obtained in N2, which part due to crystallization diffusion Ga into makes it n-type doped. wafer achieved this work promising combine material merits both Ga2O3 targeting breakthrough high-frequency high-power device performances.